Extremely thin semiconductor on insulator (etsoi) logic and memory hybrid chip

ABSTRACT

A method of forming a semiconductor device that includes providing a logic device on a semiconductor on insulating layer of a transfer substrate. The transfer substrate may further include a dielectric layer and a first handle substrate. A second handle substrate may be contacted to the semiconductor on insulating layer of the transfer substrate that includes logic device. The first handle substrate may be removed to expose the dielectric layer. A memory device can then be formed on the dielectric layer. Interconnect wiring can then be formed connecting the logic device with the memory device.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.13/791,554, filed Mar. 8, 2013 the entire content and disclosure ofwhich is incorporated herein by reference.

BACKGROUND

The present disclosure relates to semiconductor and memory structuresand a method of forming the same. More particularly, the presentdisclosure relates to semiconductor and memory devices that are formedon thin semiconductor-on-insulator (ETSOI) substrates.

For more than three decades, the continued miniaturization of siliconmetal oxide semiconductor field effect transistors (MOSFETs) has driventhe worldwide semiconductor industry. Various showstoppers to continuedscaling have been predicated for decades, but a history of innovationhas sustained Moore's Law in spite of many challenges. However, thereare growing signs today that metal oxide semiconductor transistors arebeginning to reach their traditional scaling limits. Further, for manyapplications, the weight of the electrical components is desired to besignificantly reduced. It is commonly known that the weight of thehandle substrate in silicon on insulator (SOI) substrates is the maincontributor in the total weight of the electronic system.

SUMMARY

In one aspect of the present disclosure, a method of forming logiccircuitry in combination with a memory device on an extremely thinsemiconductor on insulator (ETSOI) substrate is provided. In oneembodiment, the method may include providing a logic device on asemiconductor on insulating layer of a transfer substrate. The transfersubstrate may further include a dielectric layer and a first handlesubstrate. A second handle substrate may be contacted to thesemiconductor on insulating layer of the transfer substrate thatincludes logic device. The first handle substrate may be removed toexpose the dielectric layer. A memory device can then be formed on thedielectric layer. Interconnect wiring can then be formed connecting thelogic device with the memory device.

In another embodiment, a method of forming a semiconductor structure isprovided that may include forming a logic device on a semiconductor oninsulating (SOI) layer of a transfer substrate. The transfer substratemay include a first dielectric layer that is in contact with the SOIlayer, a floating gate layer that is in contact with the firstdielectric layer, a second dielectric layer that is in contact with thefloating gate layer, and a first handle substrate that is in contactwith the second dielectric layer. A second handle substrate may becontacted to the SOI layer of the transfer substrate that includes thelogic device. The first handle substrate may be removed to expose thesecond dielectric layer. A memory device may be formed on the seconddielectric layer. Interconnect wiring may be formed connecting the logicdevice with the memory device.

In yet another aspect of the present disclosure, a semiconductor deviceis provided that includes a substrate composed of at least a dielectriclayer and an active semiconductor layer. A memory device is positionedon a first side of the dielectric layer and is comprised of a floatinggate layer, a control oxide layer, and a control gate layer. A logicdevice is present on a second side of the dielectric layer and iscomprised of a gate structure, a source region and a drain region. Thesource region and the drain region are present in the activesemiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side cross-sectional view of one embodiment of an electricalstructure that includes a memory device and a semiconductor device, inaccordance with one embodiment of the present disclosure.

FIG. 2 is a side cross-sectional view of an initial structure includinga logic device present on an extremely thin semiconductor on insulator(ETSOI) layer of a transfer substrate, wherein the transfer substrateincludes a first handle substrate, a dielectric layer, and an SOI layerthat the logic device is formed on, in accordance with one embodiment ofthe present disclosure.

FIG. 3 is a side cross-sectional view of contacting a second handlesubstrate to the SOI layer of the transfer substrate that includes thelogic device, in accordance with one embodiment of the presentdisclosure.

FIGS. 4 and 5 are side cross-sectional views depicting removing thefirst handle substrate to expose the dielectric layer.

FIG. 6 is a side cross-sectional view depicting one embodiment offorming a gate stack of a memory device on the exposed surface of thedielectric layer, in which the gate stack includes a floating gatelayer, a control dielectric layer on the floating gate layer, and acontrol gate layer, in accordance with one embodiment of the presentdisclosure.

FIG. 7 is a side cross-sectional view depicting patterning and etchingthe gate stack to provide the gate of the memory device.

FIG. 8 is a side cross-sectional view depicting another embodiment ofthe present disclosure that includes patterning the control gate layerand a portion of the control dielectric layer of a gate stack of amemory device, in accordance with one embodiment of the presentdisclosure.

FIG. 9 is a side cross-sectional view depicting forming interconnectwiring connecting the control gate layer to the electrically conductivestud that is depicted in FIG. 8, in accordance with one embodiment ofthe present disclosure.

FIG. 10 is a side cross-sectional view of an initial structure used inanother embodiment of forming a logic device and a memory device,wherein the initial structures include a logic device present on anextremely thin semiconductor on insulator (ETSOI) layer of a transfersubstrate, wherein the transfer substrate includes a first handlesubstrate, a first dielectric layer, a floating gate layer, asemiconductor on insulator (SOI) layer, and a second dielectric layer,in which a second handle substrate has been attached to the SOI layercontaining the logic device, in accordance with one embodiment of thepresent disclosure.

FIG. 11 is a side cross-sectional view depicting removing a portion ofthe first handle substrate, wherein a remaining portion of the firsthandle substrate is present on the dielectric layer, in accordance withone embodiment of the present disclosure.

FIG. 12 is a side cross-sectional view removing the remaining portion ofthe first handle substrate from the structure depicted in FIG. 11 toexpose the first dielectric layer, in accordance with one embodiment ofthe present disclosure.

FIG. 13 is a side cross-sectional view depicting one embodiment offorming a control gate layer on the first dielectric layer of thestructure depicted in FIG. 12.

FIG. 14 is a side cross-sectional view depicting patterning the stack ofthe control gate layer, the first dielectric layer and the floating gatelayer to provide the gate structure of a memory device, and forminginterconnect wiring from the control gate layer to an electricallyconductive stud that is present extending through the second dielectriclayer.

FIG. 15 is a side cross-sectional view of another embodiment thatincludes patterning the stack of the control gate layer and the firstdielectric layer to provide the gate structure of a memory device, andforming interconnect wiring from the control gate layer to anelectrically conductive stud that is present extending through thesecond dielectric layer.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it is to be understood that the disclosed embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments are intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdisclosed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present disclosure. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shallrelate to the disclosed structures and methods, as oriented in thedrawing figures.

In complementary metal oxide semiconductor (CMOS) scaling, the weight ofthe handle substrate in silicon on insulator (SOI) substrates is themain contributor to the total weight of the electronic system. In someapplications, it can be desirable to fully remove the handle substrateafter processing is complete. In some embodiments, the presentdisclosure provides methods of removing a handle substrate in a processsequence that forms a logic device on the semiconductor on insulator(SOI) layer of an SOI substrate, and forms a memory device on the sideof the buried dielectric layer of the SOI substrate opposite the SOIlayer, wherein the memory device and the logic device are connected byan electrically conductive pathway that extends through the burieddielectric layer. In some embodiments, the process sequence that isdisclosed herein may include controlled spalling in combination with SOIsubstrates having an extremely thin semiconductor on insulator (ETSOI)layer to provide logic devices and memory devices on the same substrate.

FIG. 1 depicts one embodiment of an electrical device including a memorydevice 100 and a logic device 200 that are formed on the samesemiconductor substrate. In this embodiment, by being formed on the samesemiconductor substrate it is meant that at least a portion of the gatestructure 10 of the memory device 100 is formed on the buried dielectriclayer 3 of an SOI substrate, and the gate structure 15 of the logicdevice 200 is formed on the SOI layer 4 of the SOI substrate, whereinboth the buried dielectric layer 3 and the SOI layer 4 are provided bythe same SOI substrate. In some embodiments, the SOI layer 4 is composedof a semiconductor material, such as a silicon-containing material.Examples of silicon containing materials include silicon, single crystalsilicon, silicon germanium, and combinations thereof. The SOI layer 4typically has a thickness of less than 10 nm. In some embodiments, theSOI layer 4 has a thickness ranging from 2 nm to 8 nm. In some otherembodiments, the SOI layer 4 has a thickness that ranges from 2 nm to 20nm.

The term “memory device” denotes a structure in which the electricalstate thereof can be altered and then retained in the altered state, inthis way a bit of information can be stored. In the example that isdepicted in FIG. 1, the memory device 100 that is formed on the burieddielectric layer 3 is a flash memory device. In a flash memory device, amemory cell is provided that is similar to a typical field effecttransistor, except the gate structure 10 includes two gate conductors 9,8 instead of one, in which the two gate conductors 9, 8 are separated bya control dielectric layer 7. The lower gate conductor 8 is hereafterreferred to as a floating gate layer. The floating gate layer 8 issurrounded, i.e., insulated, by dielectric material, wherein because thefloating gate layer 8 is insulated by dielectrics, any electrons placedon it can be trapped there. In the embodiment that is depicted in FIG.1, the floating gate layer 8 is surrounded and insulated by the burieddielectric layer 3, the control dielectric layer 7 and a spacer 11 thatis formed on the sidewalls of the gate structure 10 to the memory device100.

The electrons can be trapped on the floating gate layer 8 for timeperiods of on the order of years, or less. The upper gate conductor 9 ishereafter referred to as the control gate layer. When the floating gatelayer 8 holds a charge, it screens (partially cancels) the electricfield from the control gate layer 9, which modifies the thresholdvoltage (VT) of the cell, e.g., more voltage has to be applied to thecontrol gate layer 9 to make the channel conduct. For read-out, avoltage intermediate between the possible threshold voltages is appliedto the control gate layer 9, and the semiconductor channel'sconductivity is tested (the portion of semiconductor underlying thefloating gate layer 8), which is influenced by the floating gate layer8. Typically, the current flow through the semiconductor channel issensed and forms a binary code, reproducing the stored data. Thesemiconductor channel of the memory device 100 is provided by theportion, i.e., channel portion 12, of the SOI layer 4 that also providesthe semiconductor channel of the logic device 200. On opposing sides ofthe channel portion 12 of the SOI layer 4 are doped regions 13, 14,i.e., n-type or p-type doped region, that function as the source regionand drain region of the logic device 200 and the memory device 100.

Still referring to FIG. 1, in addition to the channel portion 12 of theSOI layer 4 providing the semiconductor channel of the memory device100, the channel portion 12 of the SOI layer 4 provides thesemiconductor channel of the logic device 100 that is formed on the samesemiconductor substrate 5 as the memory device. In some examples, thelogic device 200 is an electrical device that can produce a signal thatcan be associated with a “1” or a “0” value, as typically used in abinary code. The logic device can include a semiconductor device. Asused herein, “semiconductor device” refers to an intrinsic semiconductormaterial that has been doped, i.e., into which a doping agent has beenintroduced, giving it different electrical properties than the intrinsicsemiconductor. Doping involves adding dopant atoms to an intrinsicsemiconductor, which changes the electron and hole carrierconcentrations of the intrinsic semiconductor at thermal equilibrium.Dominant carrier concentrations in an extrinsic semiconductor determinethe conductivity type of the semiconductor, e.g., n-type or p-typeconductivity.

In the embodiment depicted in FIG. 1, the logic device 100 is a fieldeffect transistor (FET). A “field effect transistor” is a semiconductordevice in which the output current, i.e., source-drain current, iscontrolled by the voltage applied to the gate structure. The gatestructure 15 of the FET is the structure used to control output current(i.e., flow of carriers in the channel region) of a semiconductingdevice through electrical or magnetic fields. The gate structure 15typically includes at least one gate conductor 16 and at least one gatedielectric 17. As used herein, the term “channel portion” is the regionof semiconductor material that is underlying the gate structure 15,wherein the channel portion is between the source region, i.e., dopedregion 14, and the drain region, i.e., doped region 13, of thesemiconductor device that becomes conductive when the semiconductordevice is turned on. As used herein, the term “source” is a doped regionin the semiconductor device, in which majority carriers are flowing intothe channel region of the semiconductor device. The term “drain” means adoped region in semiconductor device located at the end of the channel,in which carriers are flowing out of the semiconductor device throughthe drain. In one embodiment, the source region, i.e., doped region 13,of the logic device 200, e.g., FET, may be shared with the sourceregion, i.e., doped region 13, of the memory device 100. In oneembodiment, the drain region, i.e., doped region 14, of the logic device200, e.g., FET, may be shared with drain region, i.e., doped region 14,of the memory device 100.

The electrical device that is depicted in FIG. 1 also includes a readand write wiring layer 18 that is present between the SOI layer 4 and ahandling substrate 19 (referred to in the later described method as asecond handling substrate). In some embodiments, an interconnect layer23 and a stressor layer 24 are present between the read and write wiringlayer 18 and the handling substrate 19. The interconnect layer 23 mayinclude various metal interconnects and wiring layers. In some examples,the various metal interconnects may include aluminum (Al), copper (Cu)and tungsten (W). In some embodiments, the SOI layer 4 may be separatedfrom the read and write wiring layer 18 by an interlevel dielectriclayer 25. The interlevel dielectric layer 25 may have contacts 26extending from the doped regions 13, 14 of the SOI layer 4 to the readand write wiring layer 18. The face of the interlevel dielectric layer25 that is in contact with the face of the read and write wiring layer18 is typically coplanar with the face of the gate conductor 16 of theFET that is in contact with the at least one gate conductor 16. Theinterlevel dielectric layer 25 may be separated from the sidewalls ofthe gate structure 15 by gate sidewall spacers 27 that are adjacent tothe gate structure 15. The read and write wiring layer 18 typicallyincludes a dielectric layer 20, a read line 21 and a write line 22. Insome embodiments, the read line 21 is in direct contact with the gateconductor 16 of the gate structure 15.

Still referring to FIG. 1, electrical communication is provided throughthe dielectric layer 3 between the memory device 100 and the logicdevice 200. In some embodiments, the electrical communication isprovided by interconnect wiring 28 that extends from the control gatelayer 9 of the gate structure 10 of the memory device 100 into directcontact with an electrically conductive stud 29 that extends from theface of the dielectric layer 3 that the gate structure 10 of the memorydevice 100 is present on to the write line 22 that is present in theread and write wiring layer 18. Further details regarding the elementsof the electronic device that is depicted in FIG. 1 are described inmore detail in connection with the description of FIGS. 2-7.

FIGS. 2-7 depict one embodiment of a method of forming the electronicdevice that is depicted in FIG. 1. FIG. 2 depicts one embodiment of aninitial structure including a logic device 200 present on an extremelythin semiconductor on insulator (ETSOI) layer of a transfer substrate300. Referring to FIG. 2, the term “extremely thinsemiconductor-on-insulator (ETSOI) layer” as used throughout the presentdisclosure denotes an SOI layer of an SOI substrate whose thickness isfrom 2 nm to 10 nm. The SOI layer 4 that was previously described withreference to FIG. 1, may provide an ETSOI layer when having a thicknessranging from 2 nm to 10 nm. Therefore, in the following description theSOI layer 4 is hereafter referred to as an ETSOI layer 4. The initialstructure further includes a dielectric layer 3 (also referred to as aburied dielectric layer) and a base semiconductor layer 302. The ETSOIlayer 4, the dielectric layer 3 and the base handling substrate 302 maybe the components of a semiconductor on insulator (SOI) substrate.

Referring to FIG. 2, The ETSOI layer 4 is the uppermost semiconductorlayer of the substrate in which semiconductor devices, such as logicdevices 200, are typically formed. The ETSOI layer 4 may be composed ofany semiconducting material including, but not limited to Si, strainedSi, SiC, SiGe, SiGeC, Si alloys, Ge, Ge alloys, GaAs, InAs, and InP, orany combination thereof. In one embodiment, the ETSOI layer 4 issilicon. The ETSOI layer 4 may be thinned to a desired thickness byplanarization, grinding, wet etch, dry etch, oxidation followed by oxideetch, or any combination thereof. One method of thinning the ETSOI layer4 is to oxidize the silicon by a thermal dry or wet oxidation process,and then wet etch the oxide layer using a hydrofluoric acid mixture.This process can be repeated to achieve the desired thickness. In oneembodiment, the ETSOI layer 4 has a thickness ranging from 2 nm to 20nm. In another embodiment, the ETSOI layer 4 has a thickness rangingfrom 2 nm to 10 nm. In one example, the ETSOI layer 4 has a firstthickness that is greater than 20 nm.

Referring to FIG. 2, a dielectric layer 3 (also referred to as burieddielectric layer) may be present under the ETSOI layer 4. The dielectriclayer 3 is typically present underlying the ETSOI layer 4 and atop thebase semiconductor layer 302. The dielectric layer 3 may be formed byimplanting a high-energy dopant into a bulk semiconductor substrate andthen annealing the structure to form a buried insulating layer, i.e.,dielectric layer 3. In another embodiment, the dielectric layer 3 may bedeposited or grown onto the base semiconductor layer 302 prior to theformation of the ETSOI layer 4. In yet another embodiment, the SOIsubstrate of the ETSOI layer 4, the dielectric layer 3 and the basesemiconductor layer 302 may be formed using wafer-bonding techniques,where a bonded wafer pair is formed utilizing glue, adhesive polymer, ordirect bonding.

Referring to FIG. 2, the base semiconductor layer 302 may be asemiconducting material including, but not limited to Si, strained Si,SiC, SiGe, SiGeC, Si alloys, Ge, Ge alloys, GaAs, InAs, InP as well asother III/V and II/VI compound semiconductors. The base semiconductorlayer 302 may have the same or a different composition than the ETSOIlayer. The base semiconductor layer 302 may be referred to as a “firsthandle substrate”. In some examples, the ETSOI layer 4, the dielectriclayer 3 and the base semiconductor layer 302 may provide a transfersubstrate 300.

Referring to FIG. 2, the logic device 200 is formed on the ETSOI layer4, in which the channel region 12, and at least a portion of the sourceregion, i.e., doped region 14, and the drain region, i.e., doped region13, of the logic device 200 is formed in the ETSOI layer 4. In someembodiments, and prior to forming the logic device 200, the ETSOI layer4 may be patterned and etched to define an active region. The perimeterof the active region may be defined by forming an isolation region, suchas a shallow trench isolation (STI) region 30. An STI region 30 may beformed by etching a trench in the ETSOI layer 4 utilizing a dry etchingprocess, such as reactive-ion etching (RIE) or plasma etching. Chemicalvapor deposition (CVD) or another like deposition process may then beused to fill the trench with a dielectric material. A planarizationprocess, such as chemical-mechanical polishing (CMP) may optionally beused to provide a planar structure. In some embodiments, the portion ofthe ETSOI layer 4 that provides the active region may be doped toprovide a well region. For clarity, the well regions are notspecifically labeled in the drawings of the present application. Thedopant for the well regions may be introduced to the ETSOI layer 4 usingion implantation.

In the embodiment that is depicted in FIG. 2, the logic device 200 is aFET. In one example, the gate structure 15 of the FET may be formed onthe ETSOI layer 4 using deposition, photolithography and etch processes.In one embodiment, the gate structure 15 may include at least one gatedielectric 17 and at least one gate conductor 16. The material of the atleast one gate dielectric 17 can be comprised of a semiconductor oxide,semiconductor nitride, semiconductor oxynitride, or any multilayeredstack thereof. In one example, the at least one gate dielectric 17 canbe comprised of a semiconductor oxide such as, for example, silicondioxide. The at least one gate dielectric 17 can also be comprised of adielectric metal oxide having a dielectric constant that is greater thanthe dielectric constant of silicon dioxide, e.g., 3.9. In oneembodiment, the at least one gate dielectric 17 can comprise adielectric oxide having a dielectric constant greater than 4.0. Inanother embodiment, the at least one gate dielectric 17 can be comprisedof a dielectric oxide having a dielectric constant of greater than 8.0.Exemplary dielectric oxide materials which have a dielectric constant ofgreater than 3.9 include, but are not limited to HfO₂, ZrO₂, La₂O₃,Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y),La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), a silicate thereof, and an alloy thereof.Each value of x is independently from 0.5 to 3 and each value of y isindependently from 0 to 2. In some embodiments, multilayered stacks ofat least two of the above mentioned dielectric materials can be employedas the at least one gate dielectric 17. For example, the at least onegate dielectric 17 can include a stack of, from bottom to top, silicondioxide and hafnium oxide. The thickness of the at least one gatedielectric 17 may vary depending on the technique used to form the same.In one embodiment, the at least one gate dielectric material 17 has athickness from 0.5 nm to 10 nm. In another embodiment, the at least onegate dielectric 17 has a thickness from 1.0 nm to 5 nm.

The at least one gate dielectric 17 can be formed by methods well knownin the art including, for example, chemical vapor deposition (CVD),physical vapor deposition (PVD), molecular beam deposition (MBD), pulsedlaser deposition (PLD), liquid source misted chemical deposition(LSMCD), atomic layer deposition (ALD), and other like depositionprocesses. Alternatively, the at least one gate dielectric 17 can beformed utilizing a thermal process, such as, for example thermaloxidation or thermal nitridation.

The at least one gate conductor 16 can comprise any conductivemetal-containing material including, but not limited to, dopedpolysilicon, doped SiGe, an elemental metal, (e.g., tungsten, titanium,tantalum, aluminum, nickel, ruthenium, palladium and platinum), an alloyof at least two elemental metals, an elemental metal nitride (e.g.,tungsten nitride, aluminum nitride, and titanium nitride), an elementalmetal silicide (e.g., tungsten silicide, nickel silicide, and titaniumsilicide) and multi-layers thereof. In some embodiments, the at leastone gate conductor 16 includes, from bottom to top, a conductive metaland doped polysilicon. The at least one gate conductor 16 can be formedutilizing a conventional deposition process including, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), evaporation, physical vapor deposition (PVD),sputtering, chemical solution deposition, atomic layer deposition (ALD)and other like deposition processes. When a metal silicide is formed, aconventional silicidation process can be employed. When a Si-containingmaterial is employed as the at least one gate conductor 16, a non-dopedSi-containing layer can be formed and thereafter a dopant can beintroduced into the non-doped Si-containing layer by utilizing one ofion implantation, gas phase doping, or by transferring a dopant from asacrificial material layer formed in proximity of the non-dopedSi-containing layer, and then removing the sacrificial layer from thestructure. Alternatively, a doped Si-containing layer can be formedutilizing an in-situ doping deposition process. The gate structure 15 ofthe at least one gate conductor 16 and the at least one gate dielectric17 can be formed utilizing any conventional process including, forexample, a gate first or a gate last, i.e., replacement gate process. Soas not to obscure the present disclosure, the details of such processesare not described herein.

Referring to FIG. 2, the source/drain regions can be formed in the ETSOIlayer 4 utilizing an ion implantation process. The source and drainregions for the FET are depicted by a first doped region 13, e.g., drainregion, and a second doped region 14, e.g., source region. For example,the source and drain regions, e.g., first doped region 13 and seconddoped region 14, may include n-type dopants or p-type dopants. As usedherein, “p-type” refers to the addition of impurities to an intrinsicsemiconductor that creates deficiencies of valence electrons. The firstdoped region 13 and the second doped region 14 having a p-typeconductivity may be formed in a silicon containing ETSOI layer 4 bydoping the ETSOI layer 4 with elements from group III-A of the PeriodicTable of Elements. In a silicon containing ETSOI layer 4, examples ofp-type dopants, i.e., impurities, include but are not limited to boron,aluminum, gallium and indium. As used herein, “n-type” refers to theaddition of impurities that contributes free electrons to an intrinsicsemiconductor. A first doped region 13 and a second doped region 14having an n-type conductivity may be formed within a silicon containingETSOI layer 4 by doping the ETSOI layer 4 with elements from group V-Aof the Periodic Table of Elements. In a silicon containing substrate,examples of n-type dopants, i.e., impurities, include but are notlimited to, antimony, arsenic and phosphorous. The first and seconddoped regions 13, 14 that provide the source and drain region of the FETthat is formed on the ETSOI layer 4 may extend slightly beneath the edgeof the gate structure 15.

Still referring to FIG. 2B, gate sidewall spacers 27 may be formed onthe sidewalls of the gate structure 15. The gate sidewall spacers 27 maybe composed of a dielectric material. In one example, the gate sidewallspacers 27 can be comprised of a dielectric oxide, such as, for example,silicon dioxide, and/or an oxygen-impermeable dielectric material, suchas silicon nitride, or a dielectric metallic nitride. The gate sidewallspacers 27 can be formed by deposition, followed by etching.

Although not depicted in the supplied figures, the source and drainregions for the FET may include raised source and drain regions that arelocated atop the first doped region 13 and the second doped region 14.The raised source and drain regions for the FET can be formed utilizingan epitaxial growth process. Doping of the raised source and drainregions may incur-in-situ (i.e., during the epitaxial growth process) orafter the epitaxial growth process by utilizing one of ion implantation,gas phase doping or out-diffusion of a dopant from a sacrificialdopant-containing material. The semiconductor material that forms theraised source and drain regions may include any semiconductor materialsuch as, for example, silicon (Si), germanium (Ge), and silicongermanium (SiGe). In one embodiment, the semiconductor material thatforms the raised source and drain regions includes a same semiconductormaterial as that of the ETSOI layer 4. In another embodiment, thesemiconductor material that forms the raised source and drain regionincludes a different semiconductor material as that of the ETSOI layer4. It is noted that the specific material compositions for thesemiconductor material that forms the raised source and drain regionsare provided for illustrative purposes only, and are not intended tolimit the present disclosure, as any semiconductor material may beformed using an epitaxial growth process.

An interlevel dielectric layer 25 may be blanket deposited atop theETSOI layer 4 and the gate structure 15 that is formed atop the ETSOIlayer 4, and contacts 26 may be formed extending through the interleveldielectric layer 25 to the first and second doped regions 13, 14, i.e.,source and drain region of the FET. The interlevel dielectric layer 25and the contacts 26 can be formed utilizing any back-end-of-the-lineprocess including, for example, a single damascene or a dual damasceneprocess. The at least one interlevel dielectric layer 25 comprises aninterconnect dielectric material including, for example, SiO₂,silsesquioxanes, C doped oxides (i.e., organosilicates) that includeatoms of Si, C, O and H, thermosetting polyarylene ethers, ormultilayers thereof. The term “polyarylene” is used in this applicationto denote aryl moieties or inertly substituted aryl moieties which arelinked together by bonds, fused rings, or inert linking groups such as,for example, oxygen, sulfur, sulfone, sulfoxide, carbonyl and the like.The at least one interlevel dielectric layer 25 can be porous ornon-porous. In one embodiment, at least one interlevel dielectric layer25 has a dielectric constant that is about 4.0 or less. In anotherembodiment, the at least one interlevel dielectric layer 25 has adielectric constant of about 2.8 or less. All dielectric constantsmentioned herein are relative to a vacuum, unless otherwise noted.

The contacts 26 are comprised of a conductive metal such as, forexample, Cu, W, Al, and alloys thereof. Openings for the contacts 26 maybe formed in the intralevel dielectric layer 25 using photolithographyand etch processes. The etch process for forming the openings may removethe material of the interlevel dielectric layer 25 selectively to theportions of the ETSOI layer 4 containing the first and second dopedregions 13, 14. The metal is formed into the openings in the interleveldielectric layer 25 for the contacts 26 via a deposition processincluding, e.g., chemical vapor deposition, plasma enhanced chemicalvapor deposition, sputtering, and plating. A planarization process maybe applied so that the surface of the contacts 26 opposite the surfacethat is in contact with the first doped region 13 and the second dopedregion 14 is coplanar with the upper surface of the gate structure 15and an upper surface of the interlevel dielectric layer 25, as depictedin FIG. 2B.

Referring to FIG. 2B, an electrically conductive stud 29 may be formedthrough at least the interlevel dielectric layer 25. In someembodiments, the electrically conductive stud 29 may also extend throughthe ETSOI layer 4. Similar to the contacts 26 to the first and seconddoped regions 13, 14, the electrically conductive stud 29 may becomposed of a metal. For example, the electrically conductive stud 29may be composed of a metal, such as Cu, W, Al, and alloys thereof. Theelectrically conductive stud 29 can be formed by etching an openingthrough the interlevel dielectric layer 25, and optionally through theETSOI layer 4, and then filling the opening with an electricallyconductive material. The electrically conductive stud 29 may bepositioned to be contacted by one of the later formed read line 21 orwrite line 22 in the read and write wiring layer 18.

A read and write wiring layer 18 may also be present in contact with thelogic device 200 that is present on the ETSOI layer 4. The read andwrite wiring layer 18 may include a dielectric layer 20, a read line 21and a write line 22. In the embodiment that is depicted in FIG. 2B, theread line 21 is formed in electrical contact with the at least one gateconductor 16 of the gate structure 15. In some embodiments, the readline 21 and the write line 22 may be formed using a printing method, ormay be formed using deposition, photolithography and etching processsequence. The read line 21 and the write line 22 may be composed of ametal, such as Cu, W, Al, and alloys thereof. Following formation of theread line 21 and the write line 22, the dielectric layer 20 may beformed isolating the read line 21 from the write line 22 whereapplicable. The dielectric layer 20 may be any suitable dielectricmaterial such as, for example, SiC, Si₄NH₃, SiO₂, a carbon doped oxide,a nitrogen and hydrogen doped silicon carbide SiC (N,H) or multilayersthereof. Any conventional deposition process such as, e.g., chemicalvapor deposition, plasma enhanced chemical vapor deposition, chemicalsolution deposition, evaporation, and atomic layer deposition may beused in forming the dielectric layer 20 that covers the read line 21 andthe write line 22 of the read and write wiring layer 18.

In some embodiments, an interconnect layer 23 may be present on thesurface of the read and write layer 18 that is opposite the surface ofthe read and write layer 18 that is in contact with the interleveldielectric layer 25.

FIG. 3 depicts one embodiment of contacting a handle substrate 19 to theETSOI layer 4 of the transfer substrate 300 that includes the logicdevice 200. The handle substrate identified by reference number 19 ishereafter referred to as a second handle substrate 19. In the embodimentthat is depicted in FIG. 3, the second handle substrate 19 is contactedto the logic device 200 that is present on the ETSOI layer 4 through astressor layer 24. In some embodiments, the stressor layer 24 iscontacted directly to the interconnect layer 23 that is presentoverlying the logic device 200. In some embodiments, in which theinterconnect layer 23 is omitted, the stressor layer 24 may be contacteddirectly to the read and write wiring layer 18.

In some embodiments (not shown), an optional metal-containing adhesionlayer can be formed on exposed surface of the interconnect layer 23, orthe read and write wiring layer 18 when the interconnect 23 is omitted,prior to forming the stressor layer 24 so as to improve the adhesion ofthe stressor layer 24 to the surface that it is contacted to, e.g., theinterconnect layer 23 or the read and write wiring layer 18. Typically,the optional metal-containing adhesion layer is employed when a stressorlayer 24 comprised of a metal is employed. In some embodiments, anoptional plating seed layer (also not shown) can be formed directly atopexposed surface of the interconnect layer 23 prior to forming thestressor layer 24. In other embodiments, both optional layers, i.e., ametal-containing adhesion layer and a plating seed layer can be used andformed prior to the stressor layer 24.

The optional metal-containing adhesion layer that may be employed in thepresent disclosure includes any metal adhesion material such as, but notlimited to, Ti/W, Ti, Cr, Ni or any combination thereof. The optionalmetal-containing adhesion layer may comprise a single layer or it mayinclude a multilayered structure comprising at least two layers ofdifferent metal adhesion materials. The optional metal-containingadhesion layer can be formed by sputtering, chemical vapor deposition,plasma enhanced chemical vapor deposition, chemical solution deposition,physical vapor deposition, and plating. When sputter deposition isemployed, the sputter deposition process may further include an in-situsputter clean process before the deposition.

The optional metal-containing adhesion layer and/or the optional platingseed layer is (are) formed at a temperature which does not effectuatespontaneous spalling to occur within the base semiconductor layer 302.By “spontaneous” it is meant that the removal of a thin material layerfrom the base semiconductor layer 302 occurs without the need to employany manual means to initiate crack formation and propagation forbreaking apart a thin material layer from the base semiconductor layer302. By “manual” it is meant that crack formation and propagation areexplicit for breaking apart the thin material layer from the basesemiconductor layer 302. Stressor layer 24 that can be employed in thepresent disclosure includes any material that is under tensile stress atthe spalling temperature. As such, the stressor layer 24 can also bereferred to herein as a stress-inducing layer. In accordance with thepresent disclosure, the stressor layer 24 has a critical thickness andstress value that cause spalling mode fracture to occur within the basesemiconductor layer 302. By “spalling mode fracture” it is meant that acrack is formed within base semiconductor layer 302 and the combinationof loading forces maintain a crack trajectory at a depth below theuppermost surface of the base semiconductor layer 302. By “criticalcondition”, it is meant that for a given stressor material andsemiconductor base material combination, a thickness value and astressor value for the stressor layer is chosen that render spallingmode fracture possible. The spalling process, conditions for spalling,and materials for spalling can include those mentioned within co-pendingand commonly owned U.S. Patent Application Publication Nos.2010/0307572, and 2010/0311250, the entire contents of which areincorporated herein by reference.

Illustrative examples of materials that are under tensile stress whenapplied atop the base semiconductor layer 302 and thus can be used asthe stressor layer 24 include, but are not limited to, a metal, apolymer, such as a spall inducing tape layer, or any combinationthereof. The stressor layer 24 may comprise a single stressor material,or a multilayered stressor structure including at least two layers ofdifferent stressor material can be employed. In one embodiment, thestressor layer 24 is a metal. In another embodiment, the stressor layer24 is a spall inducing tape. In another embodiment, for example, thestressor layer 24 may comprise a two-part stressor layer including alower part and an upper part. The upper part of the two-part stressorlayer can be comprised of a spall inducing tape layer.

When a metal is employed as the stressor layer 24, the metal caninclude, for example, Ni, Cr, Mo, and/or W. Alloys of these metals canalso be employed. In one embodiment, the stressor layer 24 includes atleast one layer consisting of Ni. When a polymer is employed as thestressor layer 24, the polymer is a large macromolecule composed ofrepeating structural units. These subunits are typically connected bycovalent chemical bonds. Illustrative examples of polymers that can beemployed as the stressor layer 24 include, but are not limited to,polyimides polyesters, polyolefins, polyacrylates, polyurethane,polyvinyl acetate, and polyvinyl chloride.

In one embodiment and when the stressor layer 24 is a metal or polymer,the stressor layer 24 can be formed by a deposition process, such as,for example, dip coating, spin-coating, brush coating, sputtering,chemical vapor deposition, plasma enhanced chemical vapor deposition,chemical solution deposition, physical vapor deposition, and/or plating.When the stressor layer 24 is a spall inducing tape layer, the spallinducing tape layer can be applied by hand or mechanical means.

If the stressor layer 24 is of a metallic nature, it typically has athickness within a range from 3 μm to 50 μm, with a thickness within arange from 4 μm to 10 μm being more typical. Other thicknesses for ametallic stressor material that are below and/or above theaforementioned thickness ranges can also be employed in the presentdisclosure. If the stressor layer 24 is of a polymeric nature, ittypically has a thickness in a range from 10 μm to 200 μm, with athickness within a range from 50 μm to 100 μm being more typical. Otherthicknesses for a polymeric stressor material that are below and/orabove the aforementioned thickness ranges can also be employed in thepresent disclosure.

In some embodiments, the stressor layer 24 is formed directly on M1-MXlayer 23, or is formed directly on the read and write wiring layer 18,when the M1-MX layer 23 is omitted. After forming the stressor layer 24,a flexible handle layer 19 can be formed on an exposed surface of thestressor layer 24. The flexible handle layer 19 employed in the presentdisclosure comprises any flexible material, which has a minimum radiusof curvature that is typically less than 30 cm. Illustrative examples offlexible materials that can be employed as the flexible handle layer 19include a metal foil or a polyimide foil. Alternatively, a tape asdescribed above can be used as the flexible handle layer 19. Theflexible handle layer 19 can be used to provide better fracture controland more versatility in handling the spalled portion of the basesemiconductor layer 302. Moreover, the flexible handle layer 19 can beused to guide the crack propagation during spalling. The flexible handlelayer 19 of the present disclosure is typically, but not necessarily,formed at a temperature proximate to room temperature, e.g., from 15° C.to 40° C. The flexible handle layer 19 typical has a thickness of from 1μm to few mm, with a thickness of from 70 μm to 120 μm being moretypical. Other thicknesses for the flexible handle layer 19 that arebelow and/or above the aforementioned thickness ranges can also beemployed in the present disclosure.

Referring to FIG. 4, a controlled spalling process can be performed inwhich a portion of the base semiconductor layer 302 is removed. Theportion of the base semiconductor layer 302 b, which is no longerattached to the dielectric layer 3 can be referred to as herein as anon-spalled portion of semiconductor base layer 302 b. The portion ofthe semiconductor base layer 302 a that remains attached to the at leastone buried dielectric material layer 14 can be referred to herein as aspalled semiconductor base material layer 302 a. In one embodiment ofthe present disclosure, the spalled semiconductor base material layer302 a that can remain attached to the at least one buried dielectricmaterial layer 3 can have a thickness of less than 100 microns. Inanother embodiment, the spalled semiconductor base material layer 302 athat can remain attached to the at least one dielectric material layer 3can have a thickness of less than 50 microns.

Spalling can be initiated at room temperature or at a temperature thatis less than room temperature. In one embodiment, spalling is performedat room temperature (i.e., 20° C. to 40° C.). In another embodiment,spalling is performed at a temperature less than 20° C. In a furtherembodiment, spalling occurs at a temperature of 77 K or less. In an evenfurther embodiment, spalling occurs at a temperature of less than 206 K.In still yet another embodiment, spalling occurs at a temperature from175 K to 130 K.

When a temperature that is less than room temperature is used, the lessthan room temperature spalling process can be achieved by cooling thestructure down below room temperature utilizing any cooling means. Forexample, cooling can be achieved by placing the structure in a liquidnitrogen bath, a liquid helium bath, an ice bath, a dry ice bath, asupercritical fluid bath, or any cryogenic environment liquid or gas.When spalling is performed at a temperature that is below roomtemperature, the spalled structure is returned to room temperature byallowing the spalled structure to slowly warm up to room temperature byallowing the same to stand at room temperature. Alternatively, thespalled structure can be heated up to room temperature utilizing anyheating means.

Reference is now made to FIG. 5, which illustrates the structure of FIG.4 after removing the spalled semiconductor base material layer 302 athat remains attached to the dielectric layer 3. The spalledsemiconductor base material layer 302 a can be removed using an etchprocess that is selective to the dielectric layer 3, or the spalledsemiconductor base material layer 302 a can be removed using aplanarization process, such as chemical mechanical planarization (CMP).In lieu of spalling, a standard etching process, and/or a planarizationprocess, such as chemical mechanical polishing and/or grinding can beused for removing the base semiconductor layer 302.

FIGS. 6 and 7 depict one embodiment of forming a gate structure 10 of amemory device 100 on the exposed surface of the dielectric layer 3. Thegate structure 10 includes a floating gate layer 8 that is present onthe dielectric layer 3, a control dielectric layer 7 on the floatinggate layer 8, and a control gate layer 9 that is present on the controldielectric layer 7. In FIGS. 6 and 7, the structure depicted in FIG. 5is rotated 180°.

FIG. 6 depicts one embodiment of forming a gate stack on the dielectriclayer 3. The floating gate layer 8 typically comprises a conductivematerial, such as a doped semiconductor material, a conductive metallicnitride, a metallic material, or a combination thereof. Exemplary dopedsemiconductor materials include doped polysilicon, a dopedsilicon-containing semiconductor alloy, silicon nanocrystals, germaniumnanocrystals, etc. Exemplary conductive metallic nitrides include, butare not limited to, TaN, TiN, WN, TiAlN, TaCN, other conductiverefractory metal nitrides, or alloys thereof. Exemplary metallicmaterials include elemental metals and intermetallic alloys. Thethickness of the floating gate layer 8 may be from about 200 nm to about1,500 nm, although lesser and greater thicknesses are also contemplatedherein explicitly. The floating gate layer 8 may be depositing usingphysical vapor deposition (PVD), such as sputtering or plating, or maybe deposited using chemical vapor deposition (CVD).

The control dielectric layer 7 may comprise a semiconductor-baseddielectric material such as silicon oxide, silicon nitride, siliconoxynitride, and/or a stack thereof. The control dielectric layer 7 maybe formed by chemical vapor deposition (CVD). Alternately, the controldielectric layer 7 may comprise a high-k dielectric material such asHfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, an alloy thereof,and a silicate thereof. The high-k dielectric material may be formed bymethods well known in the art including, for example, a chemical vapordeposition (CVD), an atomic layer deposition (ALD), molecular beamepitaxy (MBE), pulsed laser deposition (PLD), liquid source mistedchemical deposition (LSMCD), physical vapor deposition (PVD) andcombinations thereof. The thickness of the control dielectric layer 7may be from about 1 nm to about 6 nm in the case of a conventionaldielectric material, and from about 2 nm to about 12 nm in the case ofthe high-k dielectric material.

The control gate layer 9 may be formed on the control dielectric layer7. The control gate layer 9 typically comprises a conductive material,such as a doped semiconductor material, a conductive metallic nitride, ametallic material, or a combination thereof. Exemplary dopedsemiconductor materials include doped polysilicon, a dopedsilicon-containing semiconductor alloy, silicon nanocrystals, germaniumnanocrystals, etc. Exemplary conductive metallic nitrides include, butare not limited to, TaN, TiN, WN, TiAlN, TaCN, other conductiverefractory metal nitrides, or alloys thereof. Exemplary metallicmaterials include elemental metals and intermetallic alloys. The controlgate layer 9 may be depositing using physical vapor deposition (PVD),such as sputtering or plating, or may be deposited using chemical vapordeposition (CVD). The thickness of the control gate layer 9 may be fromabout 80 nm to about 1,000 nm, and typically from about 120 nm to about400 nm, although lesser and greater thicknesses are also contemplatedherein.

FIG. 7 depicts one embodiment of patterning and etching the gate stackof the control gate layer 9, the control gate dielectric 7 and thefloating gate layer 8 to provide the gate structure 10 of the memorydevice 100. In one embodiment, the gate structure 10 of the memorydevice 100 is formed by applying a photoresist layer over the controlgate layer 9, and lithographically patterning the photoresist layer toform an etch mask protecting the portion of the gate stack that providesthe gate structure 10. The portions of the control gate layer 9, thecontrol gate dielectric 7 and the floating gate layer 8 that are notprotected by the etch mask may be removed by an anisotropic etch, suchas reactive ion etch, that is selective to the dielectric layer 3.Following the anisotropic etch, the remaining portion of the gate stackprovide the gate structure 10 to the memory device 100. In theembodiment depicted in FIG. 7, a spacer 31 may be formed on thesidewalls of the gate structure 10. The spacer 31 may be composed of adielectric material, such as an oxide, nitride or oxynitride dielectric.In one example, the spacer 31 is composed of silicon oxide. In anotherexample, the spacer 31 is composed of silicon nitride. The spacer 31 maybe formed using deposition and etch processes.

Following formation of the spacer 31, interconnect wiring 28 may beformed connecting the logic device 200 with the memory device 100, asdepicted in FIG. 1. The interconnect wiring 28 may extend from anexposed surface of the control gate layer 9 to the electricallyconductive stud 29 that is present through the dielectric layer 3. Theinterconnect wiring 28 may be present on the exterior sidewall of thespacer 31. In some embodiments, before the interconnect wiring 28 isformed, an opening is formed in the dielectric layer 3 to expose aportion of the electrically conductive stud 29. The opening may beformed in the dielectric layer using photolithography and etchprocesses. More specifically, a pattern is produced by applying aphotoresist to the surface to be etched, exposing the photoresist to apattern of radiation, and then developing the pattern into thephotoresist utilizing a resist developer to provide a photoresist etchmask. Once the patterning of the photoresist etch mask is completed, thesections covered by the photoresist are protected while the exposedregions are removed using a selective etching process that removes theunprotected regions. In one example, the opening may be formed byetching a trench in the ETSOI layer 4 utilizing a dry etching process,such as reactive-ion etching (RIE) or plasma etching, that is selectiveto the photoresist etch mask. The opening may then be filled with anelectrically conductive material that is formed in direct contact withthe electrically conductive stud 29. The material that fills theopening, as well as provides the interconnect wiring 28, may be a metal,such as copper, aluminum, silver, nickel, tungsten, platinum ortantalum. In other embodiments, the material that fills the opening, aswell as provides the interconnect wiring 28, may be a conductive metalnitride. Exemplary conductive metallic nitrides include, but are notlimited to, TaN, TiN, WN, TiAlN, TaCN, other conductive refractory metalnitrides, or alloys thereof. Exemplary metallic materials includeelemental metals and intermetallic alloys. The composition of theinterconnect wiring 28 may be the same or different than the compositionof the electrically conductive stud 29. The interconnect wiring 28 maybe deposited using chemical vapor deposition, such as plasma enhancedchemical vapor deposition, or physical vapor deposition, such assputtering or plating.

FIGS. 8 and 9 depict another embodiment of a method of forming anelectronic device that includes a logic device 200 and a memory device100 on the same semiconductor substrate. FIG. 8 depicts etching thecontrol gate layer 9 and partially etching the control dielectric layer7 a of the gate stack that is depicted in FIG. 6. The etch processdepicted in FIG. 8 is applied to the structure that is produced by theprocess sequence depicted in FIGS. 1-6, as described above. In theembodiment that is depicted in FIG. 8, the etch process that defines thecontrol gate layer 9 stops on the control dielectric layer 7 a. Theportion of the control dielectric layer 7 a that is present under theremaining portion of the control gate layer 9 has its originalthickness, but a portion of the control dielectric layer 7 a that is notunderlying the control gate layer 9 is etched to have a thickness thatis less than the original thickness of the control dielectric layer 7 a.After etching the control dielectric layer 7 a, the interconnect wiring28 may be formed connecting the logic device 200 with the memory device100, as depicted in FIG. 8. The interconnect wiring 28 may extend froman exposed surface of the control gate layer 8 through the etchedportion of the control dielectric layer 7 a to the electricallyconductive stud 29 that is present through the dielectric layer 3. Theinterconnect wiring 28 that is depicted in FIG. 8 is similar to theinterconnect wiring 28 that is depicted in FIG. 1. Therefore, furtherdetails regarding forming the interconnect wiring 28 that is depicted inFIG. 8 may be found in the above description of the interconnect wiring28 that is depicted in FIG. 1.

FIGS. 10-15 depict yet another embodiment of a method of forming anelectrical device that includes a logic device 200 and a memory device100 on the same substrate. FIG. 10 depicts one embodiment of an initialstructure used in forming the logic device 200 and a memory device 100.The logic device 200 is present on the ETSOI layer 4 of a transfersubstrate 400. In this embodiment, the transfer substrate 400 includes afirst handle substrate 401, a first dielectric layer 402, a floatinggate layer 403, a second dielectric layer 404 and an ETSOI layer 4. TheETSOI layer 4 of the transfer substrate 400 that is depicted in FIG. 10is similar to the ETSOI layer 4 of the transfer substrate 300 that isdepicted in FIG. 2. Similarly, the logic device 200 that is depicted inFIG. 10, as well as the interlevel dielectric layer 25, contacts 26,read and write wiring level 18, and interconnect layer 23, are similarto the logic device 200, interlevel dielectric layer 25, contacts 26,read and write wiring level 19 and M1-MX layer 23 that are depicted inFIG. 2.

The first and second dielectric layers 402, 404 of the transfersubstrate 400 may be composed of any dielectric material. The seconddielectric layer 404 is similar to the dielectric layer 3, e.g., burieddielectric layer, that is depicted in FIG. 2. Therefore, the descriptionof the dielectric layer 3 that is depicted in FIG. 2 is suitable for thefirst dielectric layer 404 that is depicted in FIG. 10. The compositionof the first dielectric layer 402 that is depicted in FIG. 10 is similarto the control dielectric layer 7 that is depicted in FIG. 6. Therefore,the description of the composition and the thickness of the controldielectric layer 7 that is depicted in FIG. 6 is suitable for thedescription of the composition and thickness of the first dielectriclayer 402 that is depicted in FIG. 10.

Referring to FIG. 10, the first dielectric layer 402 and the seconddielectric layer 404 of the transfer substrate 400 are separated by afloating gate layer 403. The floating gate layer 403 that is depicted inFIG. 10 is similar to the floating gate layer 8 that is depicted in FIG.6. Therefore, the description of the composition and thickness of thefloating gate layer 8 that is depicted in FIG. 6 is suitable forproviding further description of the floating gate layer 403 that isdepicted in FIG. 10.

The first handle substrate 401 that is depicted in FIG. 10 is similar tothe base semiconductor layer 302 that is depicted in FIG. 1. Therefore,the description of the base semiconductor layer 302 that is depicted inFIG. 1 can provide the description of the first handle substrate 401.

The first handle substrate 401, the first dielectric layer 402, thefloating gate layer 403, the second dielectric layer 404 and the ETSOIlayer 4 of the transfer substrate 400 may be formed using a depositionprocess, such as chemical vapor deposition. In other embodiments, thedielectric layers, i.e., first and second dielectric layers 402, 403,are formed using a thermal growth process. In yet another embodiment,some of the layers within the transfer substrate 400 are provided bylayer transfer processes.

In some embodiments, an electrically conductive stud 29 is presentextending through the interlevel dielectric layer 25, the ETSOI layer 4,and the second dielectric layer 404. The electrically conductive stud 29that is depicted in FIG. 10 is similar to the electrically conductivestud 29 that is depicted in FIG. 2. Therefore, the description of thecomposition and method of making the electrically conductive stud 29that is made above with reference to FIG. 2 is applicable to theelectrically conductive stud 29 that is depicted in FIG. 10.

FIG. 10 further depicts a second handle substrate 19 (also referred toas “flexible handle layer 19”) that is attached to the logic device 200and the ETSOI layer 4. More specifically, in some embodiments, thesecond handle substrate 19 may be attached to the read and write wiringlayer 18 that is present overlying the logic device 200 through ainterconnect layer 23, and a stressor layer 24. The interconnect layer23 and the stressor layer 24 have been described above with reference toFIGS. 2 and 3. Further details regarding bonding of the second handlesubstrate 19 to the logic device 200 are also provided above in thedescription of FIG. 3.

FIG. 11 depicts removing a portion of the first handle substrate 401 b,wherein a remaining portion of the first handle substrate 401 a ispresent on the first dielectric layer 402. The portion of the firsthandle substrate 401 b that is removed may be separated from theremaining portion of the first handle substrate 401 a by a spallingmethod, as described above with reference to FIG. 4.

FIG. 12 depicts removing the remaining portion of the first handlesubstrate 401 a from the structure depicted in FIG. 11 to expose thefirst dielectric layer 402. The remaining portion of the first handlesubstrate 401 a may be removed by a planarization process, as describedabove with reference to FIG. 4.

FIG. 13 depicts one embodiment of forming a control gate layer 9 on thefirst dielectric layer 402. The control gate layer 9 is similar to thecontrol gate layer 9 of the gate stack that is depicted in FIG. 6.Therefore, the description of the control gate layer 9 that is depictedin FIG. 6 is suitable for the control gate layer 9 that is depicted inFIG. 13. The structure depicted in FIG. 13 has been rotated 180° fromthe position depicted in FIG. 12.

FIG. 14 depicts patterning the stack of the control gate layer 9, thefirst dielectric layer 402 and the floating gate layer 403 to providethe gate structure of a memory device 100. In one embodiment, the stackof the control gate layer 9, the first dielectric layer 402 and thefloating gate layer 403 may be patterned using photolithography and etchprocesses. Patterning the stack of the control gate layer 9, the firstdielectric layer 402 and the floating gate layer 403 that are depictedin FIG. 14 is similar to patterning the gate stack of the control gatelayer 9, the control dielectric layer 3 and the floating gate layer 8that is depicted in FIG. 7. Therefore, the description of patterning andetching the gate stack that is depicted in FIG. 7 is suitable forpatterning and etching the gate stack that is depicted in FIG. 14. Theremaining portion of the gate stack following etching provide the gatestructure 10 of the memory device 100. In the embodiment depicted inFIG. 14, the control dielectric layer of the gate structure 10 isprovided by the first dielectric layer 402. FIG. 14 further depictsforming a spacer 31 on the sidewalls of the gate structure 10.

FIG. 14 also depicts forming interconnect wiring 28 from the controlgate layer 9 of the gate structure 10 to the electrically conductivestud 29 that is present extending through the second dielectric layer404. The interconnect wiring 28 that is depicted in FIG. 14 is similarto the interconnect wiring 28 that is depicted in FIG. 1. Therefore, thedescription of the interconnect wiring 28 that is depicted in FIG. 1 issuitable for the description of the interconnect wiring that is depictedin FIG. 14.

FIG. 15 depicts another embodiment of the present disclosure. In FIG.15, the pattern and etch process that forms the gate structure 10 a ofthe memory device 100 etches only a portion of the thickness of thefirst dielectric layer 402. More specifically, following etching of thegate stack 10 a, the portion of the first dielectric layer 402 that ispresent underlying the remaining portion of the control gate layer 9 hasits original thickness, while the portions of the first dielectric layer402 that are not present under the remaining portion of the control gatelayer 9 have a reduced thickness. The gate structure 10 a of the memorydevice 100 that is depicted in FIG. 15 is similar to the gate structureof the memory device 100 that is depicted in FIG. 9. Therefore, thedescription of patterning and etching the gate structure depicted inFIG. 9 is suitable for describing the patterning and etching of the gatestructure 10 a depicted in FIG. 15. Following formation of the gatestructure 10 a, the interconnect wiring 28 is formed extending from thecontrol gate layer 9 to the electrically conductive stud 29. Theinterconnect wiring 28 the memory device 100 that is depicted in FIG. 15is similar to the interconnect wiring 28 of the memory device depictedin FIG. 9. Therefore, the description of patterning and etching the gatestructure depicted in FIG. 9 is suitable for describing the patterningand etching of the gate structure 10 a depicted in FIG. 15. Theremaining elements of the logic device 200 and the memory device 100have been described above with reference to FIGS. 1-14.

While the present disclosure has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present disclosure. It is therefore intended that the presentdisclosure not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1. A semiconductor device comprising: a substrate comprised of at leasta dielectric layer and an active semiconductor layer, wherein saiddielectric layer comprises a first side and a second side opposing andlocated beneath said first side; a memory device positioned on the firstside of the dielectric layer and is comprised of a floating gate layer,a control oxide layer, and a control gate layer; and a logic devicepresent on the second side of the dielectric layer and is comprised of agate structure, a source region and a drain region, wherein the sourceregion and the drain region of the logic device are present in theactive semiconductor layer.
 2. The semiconductor device of claim 1,wherein the logic device comprises a field effect transistor (FET). 3.The semiconductor device of claim 2, wherein the gate structure of theFET includes a gate dielectric that is present on the side of the activesemiconductor layer that is opposite a side of the active semiconductorlayer that is in direct contact with the dielectric layer of thesubstrate.
 4. The semiconductor device of claim 3 further comprising aread and write layer on the gate structure.
 5. The semiconductor deviceof claim 4, wherein said read layer comprises a read line that is inelectrical communication with the gate structure of the logic device. 6.The semiconductor device of claim 4 wherein said write layer comprises awrite line that is in electrical communication with the control gatelayer of the memory device.
 7. The semiconductor device of claim 1,wherein the active semiconductor layer has a thickness of 10 nm or less.8. The semiconductor device of claim 4, further comprising a stressorlayer that is in positioned on the read and write layer.
 9. Thesemiconductor device of claim 8, wherein said stressor layer is undertensile stress.
 10. The semiconductor device of claim 9, wherein saidstressor layer is selected from the group consisting of a metal, apolymer and combinations thereof.
 11. A semiconductor device comprising:a substrate comprised of at least a dielectric layer and an activesemiconductor layer; a memory device positioned on a first side of thedielectric layer and is comprised of a floating gate layer, a controloxide layer, and a control gate layer; a logic device present on asecond side of the dielectric layer and is comprised of a gatestructure, a source region and a drain region, wherein the source regionand the drain region of the logic device are present in the activesemiconductor layer; and a read layer and a write layer on the gatestructure.
 12. The semiconductor device of claim 11, wherein said readlayer comprises a read line that is in electrical communication with thegate structure of the logic device.
 13. The semiconductor device ofclaim 11, wherein said write layer comprises a write line that is inelectrical communication with the control gate layer of the memorydevice.
 14. The semiconductor device of claim 11, wherein the activesemiconductor layer has a thickness of 10 nm or less.
 15. Thesemiconductor device of claim 11, further comprising a stressor layerthat is in positioned on the read and write layer.
 16. A semiconductordevice comprising: a substrate comprised of at least a dielectric layerand an active semiconductor layer, wherein the active semiconductorlayer has a thickness of 10 nm or less; a memory device positioned on afirst side of the dielectric layer and is comprised of a floating gatelayer, a control oxide layer, and a control gate layer; and a logicdevice present on a second side of the dielectric layer and is comprisedof a gate structure, a source region and a drain region, wherein thesource region and the drain region of the logic device are present inthe active semiconductor layer.
 17. The semiconductor device of claim 16further comprising a read and write layer on the gate structure.
 18. Thesemiconductor device of claim 17, wherein said read layer comprises aread line that is in electrical communication with the gate structure ofthe logic device.
 19. The semiconductor device of claim 17 wherein saidwrite layer comprises a write line that is in electrical communicationwith the control gate layer of the memory device.
 20. The semiconductordevice of claim 16, further comprising a stressor layer that is inpositioned on the read and write layer.